Share Email Print
cover

Proceedings Paper

Strain-induced Pockels effect in silicon waveguides (Conference Presentation)
Author(s): Mathias Berciano; Pedro Damas; Guillaume Marcaud; Xavier Le Roux; Paul Crozat; Carlos Alonso-Ramos; Daniel Benedikovic; Delphine Marris-Morini; Eric Cassan; Laurent Vivien
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

With the increasing demand of data, current chip-scale communication systems based on metallic interconnects suffer rate limitations and power consumptions. In this context, Silicon photonics has emerged as an alternative by replacing the classical copper interconnects with silicon waveguides while taking advantage of the well-established CMOS foundries techniques to reduce fabrication costs. Silicon is now considered as an excellent candidate for the development of integrated optical functionalities including waveguiding structures, modulators, switches… One of the main challenges of silicon photonics is to reduce the power consumption and the swing voltage of optical silicon modulators while increasing the data rate speed. However, silicon is a centrosymmetric crystal, vanishing the second order nonlinear effect i.e. Pockels effect which is intrinsically a high speed effect. To overcome this limitation, mechanical stresses on silicon to break the crystal symmetry can be used depositing a strained overlayer.

In this work, we have studied the effect of the stress layer in the modulation characteristics based on Mach-Zehnder interferometers. The deposition of silicon nitride as the stress layer and its optimization to induce the maximum effect will be presented.

Paper Details

Date Published: 16 June 2017
PDF: 1 pages
Proc. SPIE 10249, Integrated Photonics: Materials, Devices, and Applications IV, 1024908 (16 June 2017); doi: 10.1117/12.2266023
Show Author Affiliations
Mathias Berciano, Ctr. for Nanosciences and Nanotechnologies, Univ. Paris-Sud 11 (France)
Pedro Damas, Ctr. for Nanosciences and Nanotechnologies, Univ. Paris-Sud 11 (France)
Guillaume Marcaud, Ctr. for Nanosciences and Nanotechnologies, Univ. Paris-Sud 11 (France)
Xavier Le Roux, Ctr. for Nanosciences and Nanotechnologies, Univ. Paris-Sud 11 (France)
Paul Crozat, Ctr. for Nanosciences and Nanotechnologies, Univ. Paris-Sud 11 (France)
Carlos Alonso-Ramos, Ctr. for Nanosciences and Nanotechnologies, Univ. Paris-Sud 11 (France)
Daniel Benedikovic, Ctr. for Nanosciences and Nanotechnologies, Univ. Paris-Sud 11 (France)
Delphine Marris-Morini, Ctr. for Nanosciences and Nanotechnologies, Univ. Paris-Sud 11 (France)
Eric Cassan, Ctr. for Nanosciences and Nanotechnologies, Univ. Paris-Sud 11 (France)
Laurent Vivien, Ctr. for Nanosciences and Nanotechnologies, Univ. Paris-Sud 11 (France)


Published in SPIE Proceedings Vol. 10249:
Integrated Photonics: Materials, Devices, and Applications IV
Jean-Marc Fédéli; Laurent Vivien, Editor(s)

© SPIE. Terms of Use
Back to Top