Share Email Print
cover

Proceedings Paper

N-type induced junction black silicon photodiode for UV detection
Author(s): Mikko A. Juntunen; Juha Heinonen; Hannu S. Laine; Ville Vähänissi; Päivikki Repo; Anna Vaskuri; Hele Savin
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Commercial photodiodes suffer from reflection losses and different recombination losses that reduce the collection efficiency. Recently, we realized a near-ideal silicon photodiode that exhibits an external quantum efficiency above 95% over the wavelength range of 235 – 980 nm, exceeds 100% below 300nm, and provides a very high response at incident angles of up to 70 degrees. The high quantum efficiency is reached by 1) virtually eliminating front surface reflectance by forming a “black silicon” nanostructured surface having dimensions proportional to the wavelength of light to be detected and 2) using an induced junction for signal collection instead of a conventional doped p-n junction, virtually eliminating Auger recombination at the light entry surface. This recombination prevention is especially important in ultraviolet detection since ultraviolet photons are absorbed very close to device surface, where conventional photodiodes have high doping concentration causing loss of signal, but induced junction diode is able to collect virtually all charge carriers generated. In this paper, we analyse the performance of our photodiodes under ultraviolet radiation.

Paper Details

Date Published: 30 May 2017
PDF: 7 pages
Proc. SPIE 10249, Integrated Photonics: Materials, Devices, and Applications IV, 102490I (30 May 2017); doi: 10.1117/12.2265868
Show Author Affiliations
Mikko A. Juntunen, Aalto Univ. (Finland)
Helsinki Institute of Physics (Finland)
Juha Heinonen, Aalto Univ. (Finland)
Hannu S. Laine, Aalto Univ. (Finland)
Ville Vähänissi, Aalto Univ. (Finland)
Päivikki Repo, Aalto Univ. (Finland)
Anna Vaskuri, Aalto Univ. (Finland)
Hele Savin, Aalto Univ. (Finland)


Published in SPIE Proceedings Vol. 10249:
Integrated Photonics: Materials, Devices, and Applications IV
Jean-Marc Fédéli; Laurent Vivien, Editor(s)

© SPIE. Terms of Use
Back to Top