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Proceedings Paper

Robust integration schemes for junction-based modulators in a 200mm CMOS compatible silicon photonic platform (Conference Presentation)
Author(s): Bertrand Szelag; Alexis Abraham; Stéphane Brision; Paul Gindre; Benjamin Blampey; André Myko; Segolene Olivier; Christophe Kopp

Paper Abstract

Silicon photonic is becoming a reality for next generation communication system addressing the increasing needs of HPC (High Performance Computing) systems and datacenters. CMOS compatible photonic platforms are developed in many foundries integrating passive and active devices. The use of existing and qualified microelectronics process guarantees cost efficient and mature photonic technologies. Meanwhile, photonic devices have their own fabrication constraints, not similar to those of cmos devices, which can affect their performances.

In this paper, we are addressing the integration of PN junction Mach Zehnder modulator in a 200mm CMOS compatible photonic platform. Implantation based device characteristics are impacted by many process variations among which screening layer thickness, dopant diffusion, implantation mask overlay. CMOS devices are generally quite robust with respect to these processes thanks to dedicated design rules. For photonic devices, the situation is different since, most of the time, doped areas must be carefully located within waveguides and CMOS solutions like self-alignment to the gate cannot be applied. In this work, we present different robust integration solutions for junction-based modulators. A simulation setup has been built in order to optimize of the process conditions. It consist in a Mathlab interface coupling process and device electro-optic simulators in order to run many iterations. Illustrations of modulator characteristic variations with process parameters are done using this simulation setup. Parameters under study are, for instance, X and Y direction lithography shifts, screening oxide and slab thicknesses. A robust process and design approach leading to a pn junction Mach Zehnder modulator insensitive to lithography misalignment is then proposed. Simulation results are compared with experimental datas. Indeed, various modulators have been fabricated with different process conditions and integration schemes. Extensive electro-optic characterization of these components will be presented.

Paper Details

Date Published: 16 June 2017
PDF: 1 pages
Proc. SPIE 10249, Integrated Photonics: Materials, Devices, and Applications IV, 1024907 (16 June 2017); doi: 10.1117/12.2265757
Show Author Affiliations
Bertrand Szelag, CEA-LETI (France)
Alexis Abraham, CEA-LETI (France)
Stéphane Brision, CEA-LETI (France)
Paul Gindre, CEA-LETI (France)
Benjamin Blampey, CEA-LETI (France)
André Myko, CEA-LETI (France)
Segolene Olivier, CEA-LETI (France)
Christophe Kopp, CEA-LETI (France)


Published in SPIE Proceedings Vol. 10249:
Integrated Photonics: Materials, Devices, and Applications IV
Jean-Marc Fédéli; Laurent Vivien, Editor(s)

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