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Proceedings Paper

Non-destructive determination of thickness of the dielectric layers using EDX
Author(s): S. A. Sokolov; E. A. Kelm; R. A. Milovanov; D. A. Abdullaev; L. N. Sidorov
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Paper Abstract

In this work a non-destructive method for measuring the thickness of the dielectric layers consisting of silicon dioxide and silicon nitride has been developed using a scanning electron microscope (SEM) equipped with energy dispersive X-ray spectrometer (EDS). Rising in accelerating voltage of electron beam leads to increasing in the depth of generation of the characteristic X-ray. If the ratio of the signal intensity of one of the substrate’s elements to the noise equal to 3 suggests that the generation’s depth of the characteristic X-ray coincides with the thickness of the overlying film. Dependence of the overlying film's thickness on the accelerating voltage can be plotted. Validation of the results was carried out by using the equation of Anderson-Hassler. The generation’s volume of the characteristic X-Ray was simulated by CASINO program. The simulations results are in good agreement with experimental results for small thicknesses.

Paper Details

Date Published: 30 December 2016
PDF: 6 pages
Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 1022426 (30 December 2016); doi: 10.1117/12.2265570
Show Author Affiliations
S. A. Sokolov, Lomonosov Moscow State Univ. (Russian Federation)
Institute of Nanotechnology of Microelectronics (Russian Federation)
E. A. Kelm, Institute of Nanotechnology of Microelectronics (Russian Federation)
R. A. Milovanov, Institute of Nanotechnology of Microelectronics (Russian Federation)
Moscow Technological Univ. (Russian Federation)
D. A. Abdullaev, Institute of Nanotechnology of Microelectronics (Russian Federation)
Moscow Technological Univ. (Russian Federation)
L. N. Sidorov, Lomonosov Moscow State Univ. (Russian Federation)


Published in SPIE Proceedings Vol. 10224:
International Conference on Micro- and Nano-Electronics 2016
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)

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