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Proceedings Paper

Resonant tunneling transport in ZnxBe1-xSe/ZnSe/ZnyBe1-ySe asymmetric quantum structures
Author(s): Vadim P. Sirkeli; Oktay Yilmazoglu; Shihab Al-Daffaie; Ion Oprea; Duu Sheng Ong; Franko Küppers; Hans L. Hartnagel
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Paper Abstract

II-VI compounds are promising materials for the fabrication of room-temperature terahertz devices due to their beneficial properties like as type-I conduction band alignment, high breakdown field strength (~331 kV/cm for ZnSe vs. ~80 kV/cm for GaAs), and higher values of the conduction band offset (1.5 eV for BeSe/ZnSe vs. 0.7 eV for AlAs/GaAs). In this paper we report on numerical study of the resonant tunneling transport in ZnBeSe/ZnSe/ZnBeSe symmetric and asymmetric resonant tunneling diodes (RTDs). The negative differential resistance feature is observed in the current-voltage characteristics of the ZnSe-based RTDs. It is found that the maximum of peak-to-valley ratio (PVR) of the current density is equal to 6.025 and 7.144 at 150 K, and to 1.120 and 1.105 at 300 K for the symmetric and asymmetric RTDs, respectively. The effect of barrier heights on the frequency and output power performance of RTD devices are studied and discussed.

Paper Details

Date Published: 30 May 2017
PDF: 7 pages
Proc. SPIE 10248, Nanotechnology VIII, 1024811 (30 May 2017); doi: 10.1117/12.2265367
Show Author Affiliations
Vadim P. Sirkeli, Technische Univ. Darmstadt (Germany)
Comrat State Univ. (Moldova)
Oktay Yilmazoglu, Technische Univ. Darmstadt (Germany)
Shihab Al-Daffaie, Technische Univ. Darmstadt (Germany)
Ion Oprea, Technische Univ. Darmstadt (Germany)
Duu Sheng Ong, Multimedia Univ. (Malaysia)
Franko Küppers, Technische Univ. Darmstadt (Germany)
Hans L. Hartnagel, Technische Univ. Darmstadt (Germany)


Published in SPIE Proceedings Vol. 10248:
Nanotechnology VIII
Ion M. Tiginyanu, Editor(s)

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