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Proceedings Paper

Progress in design and fabrication of resonator quantum well infrared photodetectors (R-QWIP) (Conference Presentation)
Author(s): Jason N. Sun; Kwong-Kit Choi; Kimberley A. Olver; Richard X. Fu
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Paper Abstract

Resonator-Quantum Well Infrared Photo detectors (R-QWIPs) are the next generation of QWIP detectors that use resonances to increase the quantum efficiency (QE). Recently, we are exploring R-QWIPs for broadband long wavelength applications. To achieve the expected performance, two optimized inductively coupled plasma (ICP) etching processes (selective and non-selective) are developed. Our selective ICP etching process has a nearly infinite selectivity of etching GaAs over Ga1-xAlxAs. By using the etching processes, two format (1Kx1K and 40x40) detectors with 25 μm pixel pitch were fabricated successfully. In despite of a moderate doping of 0.5 × 1018 cm-3 and a thin active layer thickness of 0.6 or 1.3 μm, we achieved a quantum efficiency 35% and 37% for 8 quantum wells and 19 quantum wells respectively. The temperature at which photocurrent equals dark current is about 66 K under F/2 optics for a cutoff wavelength up to 11 μm. The NEΔT of the FPAs is estimated to be 22 mK at 2 ms integration time and 60 K operating temperature. This good result thus exemplifies the advantages of R-QWIP.

Paper Details

Date Published: 16 June 2017
PDF: 1 pages
Proc. SPIE 10249, Integrated Photonics: Materials, Devices, and Applications IV, 102490K (16 June 2017); doi: 10.1117/12.2265116
Show Author Affiliations
Jason N. Sun, U.S. Army Research Lab. (United States)
Kwong-Kit Choi, U.S. Army Research Lab. (United States)
Kimberley A. Olver, U.S. Army Research Lab. (United States)
Richard X. Fu, U.S. Army Research Lab. (United States)


Published in SPIE Proceedings Vol. 10249:
Integrated Photonics: Materials, Devices, and Applications IV
Jean-Marc Fédéli; Laurent Vivien, Editor(s)

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