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Proceedings Paper

Temperature influence on diode pumped Yb:GGAG laser
Author(s): Karel Veselský; Pavel Boháček; Jan Šulc; Helena Jelínková; Bohumil Trunda; Lubomír Havlák; Karel Jurek; Martin Nikl
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Paper Abstract

We present temperature influence (in range from 78 up to 400,K) on spectroscopic properties and laser performance of new Yb-doped mixed garnet Gd3GaxAl5-xO12 (Yb:GGAG). The sample was 2.68 mm thick plane-parallel face-polished Yb:GGAG single-crystal plate which was AR coated for pump (930 nm) and generated (1030 nm) laser radiation wavelength. The composition of sample was Gd3.098Yb0:0897Ga2:41Al2.41O12 (3 at % Yb/Gd). The Yb:GGAG crystal was mounted in temperature controlled copper holder of the liquid nitrogen cryostat. The 138 mm long semi-hemispherical laser resonator consisted of a flat pumping mirror (T > 90 % @ 930 nm, HR @ 1030 nm) placed inside cryostat, and a curved output coupler (r = 150 mm, R = 94.5 % @ 1030 nm) placed outside cryostat. For longitudinal pumping a fiber coupled laser diode was used. The diode was operating in the pulse regime (5 ms pulse length, 20 Hz repetition rate) at wavelength 928.5 nm. The absorption spectrum was measured for the temperatures from 78 to 400 K, and absorption lines narrowing was observed with temperature decrease. Zero-phonon line at 970 nm has width 1 nm (FWHM) at 100 K. The fluorescence intensity decay time was measured and it increased linearly with temperature from 864 μs @ 78 K to 881 μs @ 300 K. The temperature of active medium has strong influence mainly on laser threshold which was 5 times lower at 100 K than at 300 K, and on slope efficiency which was 3 times higher at 100 K than at 300 K.

Paper Details

Date Published: 11 May 2017
PDF: 7 pages
Proc. SPIE 10238, High-Power, High-Energy, and High-Intensity Laser Technology III, 1023812 (11 May 2017); doi: 10.1117/12.2265016
Show Author Affiliations
Karel Veselský, Czech Technical Univ. in Prague (Czech Republic)
Pavel Boháček, Institute of Physics of the ASCR, v.v.i. (Czech Republic)
Jan Šulc, Czech Technical Univ. in Prague (Czech Republic)
Helena Jelínková, Czech Technical Univ. in Prague (Czech Republic)
Bohumil Trunda, Institute of Physics of the ASCR, v.v.i. (Czech Republic)
Lubomír Havlák, Institute of Physics of the ASCR, v.v.i. (Czech Republic)
Karel Jurek, Institute of Physics of the ASCR, v.v.i. (Czech Republic)
Martin Nikl, Institute of Physics of the ASCR, v.v.i. (Czech Republic)


Published in SPIE Proceedings Vol. 10238:
High-Power, High-Energy, and High-Intensity Laser Technology III
Joachim Hein, Editor(s)

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