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Proceedings Paper

Low temperature readout circuit characteristics of low dimensional compound semiconductor photodetectors
Author(s): Jie Song; Wei Wang; Haidong Lu; Fangmin Guo
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Paper Abstract

In this paper we analyze the necessity of design of low temperature readout circuit. Since the photodetector should work in low temperature environment, it is necessary for the readout circuit with low temperature readout function. Meanwhile, the influence factors of ultra - low temperature on the CMOS readout circuit are analyzed. The main influencing factors are carrier freezing analysis, current mutation (Kink) and mobility change. Finally, we used JANIS SHI-4-2 liquid helium cycle refrigeration system as a refrigeration instrument, and do the test for the readout circuit at ultra -low-temperature. When the temperature of cold head of the cooling system reach to the minimum temperature (4.85K) and maintain 5 hours, Si substrate’ temperature reaches the minimum temperature (50.1K). By adjusting the static operating point voltage, we find that the circuit still works well.

Paper Details

Date Published: 5 January 2017
PDF: 8 pages
Proc. SPIE 10244, International Conference on Optoelectronics and Microelectronics Technology and Application, 1024416 (5 January 2017); doi: 10.1117/12.2264581
Show Author Affiliations
Jie Song, East China Normal Univ. (China)
Wei Wang, East China Normal Univ. (China)
Haidong Lu, East China Normal Univ. (China)
Fangmin Guo, East China Normal Univ. (China)


Published in SPIE Proceedings Vol. 10244:
International Conference on Optoelectronics and Microelectronics Technology and Application
Shaohua Yu; Jose Capmany; Yi Luo; Yikai Su; Songlin Zhuang; Yue Hao; Akihiko Yoshikawa; Chongjin Xie; Yoshiaki Nakano, Editor(s)

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