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Proceedings Paper

Interface state density effect on the performance of graphene silicon heterojunction solar cell
Author(s): Yawei Kuang; Bencai Lin; Yulong Ma; Yushen Liu; Xifeng Yang; Debao Zhang; Zhenguang Shao; Jinfu Feng
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Paper Abstract

A planar structure consisting of graphene layer as the hole transport material, and n-type silicon as substrate is simulated. The degradation of this cell caused by high interface state density has been carried out. The simulated results match published experimental results indicating the accuracy of the physics-based model. Using this model, the effect of interface state density as zero, 1×1016cm-2, 1×1017cm-2 on the photovoltaic performance has been studied. The obtained IV and EQE characteristic based on realistic parameters shows that the interface state playing a prominent role in graphene silicon schottky contact.

Paper Details

Date Published: 5 January 2017
PDF: 4 pages
Proc. SPIE 10244, International Conference on Optoelectronics and Microelectronics Technology and Application, 102441U (5 January 2017); doi: 10.1117/12.2264363
Show Author Affiliations
Yawei Kuang, Changshu Institute of Technology (China)
Changzhou Univ. (China)
Bencai Lin, Changzhou Univ. (China)
Yulong Ma, Changshu Institute of Technology (China)
Yushen Liu, Changshu Institute of Technology (China)
Xifeng Yang, Changshu Institute of Technology (China)
Debao Zhang, Changshu Institute of Technology (China)
Zhenguang Shao, Changshu Institute of Technology (China)
Jinfu Feng, Changshu Institute of Technology (China)


Published in SPIE Proceedings Vol. 10244:
International Conference on Optoelectronics and Microelectronics Technology and Application
Shaohua Yu; Jose Capmany; Yi Luo; Yikai Su; Songlin Zhuang; Yue Hao; Akihiko Yoshikawa; Chongjin Xie; Yoshiaki Nakano, Editor(s)

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