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Proceedings Paper

Large-format multi-wafer production of 5" GaSb-based photodetectors by molecular beam epitaxy
Author(s): Dmitri Loubychev; Joel M. Fastenau; Michael Kattner; Phillip Frey; Amy W. K. Liu; Mark J. Furlong
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Paper Abstract

GaSb and its heterostructures grown by molecular beam epitaxy (MBE) have received much attention given their application in a wide range of mid-wave and long-wave IR photodetector applications. With the maturation of the MBE growth process, focus is now turned to improving manufacturing readiness and the transition to the production of large-format wafers. We will discuss the transition from the development of early detector layer structures on 2” diameter GaSb substrates, through today’s 3”/4” production standard, and to the onset of 5” pilot production from the perspective of volume compound semiconductor manufacturing. We will report on the growth of 5” GaSb-based MWIR nBn detector structures using a large format 5×5” production MBE platform. Structural and optical properties, as well as electrical data from large-area mesa diodes will be presented and compared with results achieved with smaller batch size MBE reactor platform.

Paper Details

Date Published: 16 May 2017
PDF: 8 pages
Proc. SPIE 10177, Infrared Technology and Applications XLIII, 1017718 (16 May 2017); doi: 10.1117/12.2263962
Show Author Affiliations
Dmitri Loubychev, IQE Inc. (United States)
Joel M. Fastenau, IQE Inc. (United States)
Michael Kattner, IQE Inc. (United States)
Phillip Frey, IQE Inc. (United States)
Amy W. K. Liu, IQE Inc. (United States)
Mark J. Furlong, IQE (United Kingdom)


Published in SPIE Proceedings Vol. 10177:
Infrared Technology and Applications XLIII
Bjørn F. Andresen; Gabor F. Fulop; Charles M. Hanson; John Lester Miller; Paul R. Norton, Editor(s)

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