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Proceedings Paper

Evidence of carrier localization in InAsSb/InSb digital alloy nBn detector
Author(s): Brian J. Pepper; Alexander Soibel; David Z. Ting; Cory J. Hill; Arezou Khoshakhlagh; Anita M. Fisher; Sam A. Keo; Sarath D. Gunapala
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Paper Abstract

Recently we have demonstrated a novel method of extending the cut-off wavelength of InAsSb nBn detectors, by incorporating a series of monolayers of InSb. Here we study photoluminescence and minority carrier lifetime of this InAsSb/InSb digital alloy. While increasing temperature from 15 K to 40 K we show a 14 meV blue shift of the photoluminescence peak energy and a decrease in lifetime. This deviation from the expected Varshni empirical relation indicates strong carrier localization. We contrast to photoluminescence and lifetime results in bulk InAsSb. We discuss implications of this localization for design of digital alloy InAsSb/InSb nBn detectors.

Paper Details

Date Published: 16 May 2017
PDF: 7 pages
Proc. SPIE 10177, Infrared Technology and Applications XLIII, 101771P (16 May 2017); doi: 10.1117/12.2263064
Show Author Affiliations
Brian J. Pepper, Jet Propulsion Lab. (United States)
Alexander Soibel, Jet Propulsion Lab. (United States)
David Z. Ting, Jet Propulsion Lab. (United States)
Cory J. Hill, Jet Propulsion Lab. (United States)
Arezou Khoshakhlagh, Jet Propulsion Lab. (United States)
Anita M. Fisher, Jet Propulsion Lab. (United States)
Sam A. Keo, Jet Propulsion Lab. (United States)
Sarath D. Gunapala, Jet Propulsion Lab. (United States)


Published in SPIE Proceedings Vol. 10177:
Infrared Technology and Applications XLIII
Bjørn F. Andresen; Gabor F. Fulop; Charles M. Hanson; John Lester Miller; Paul R. Norton, Editor(s)

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