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Plasmonic integrated circuits comprising metal waveguides, multiplexer/demultiplexer, detectors, and logic circuits on a silicon substrate
Author(s): M. Fukuda; M. Ota; A. Sumimura; S. Okahisa; M. Ito; Y. Ishii; T. Ishiyama
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Paper Abstract

A plasmonic integrated circuit configuration comprising plasmonic and electronic components is presented and the feasibility for high-speed signal processing applications is discussed. In integrated circuits, plasmonic signals transmit data at high transfer rates with light velocity. Plasmonic and electronic components such as wavelength-divisionmultiplexing (WDM) networks comprising metal wires, plasmonic multiplexers/demultiplexers, and crossing metal wires are connected via plasmonic waveguides on the nanometer or micrometer scales. To merge plasmonic and electronic components, several types of plasmonic components were developed. To ensure that the plasmonic components could be easily fabricated and monolithically integrated onto a silicon substrate using silicon complementary metal-oxide-semiconductor (CMOS)-compatible processes, the components were fabricated on a Si substrate and made from silicon, silicon oxides, and metal; no other materials were used in the fabrication. The plasmonic components operated in the 1300- and 1550-nm-wavelength bands, which are typically employed in optical fiber communication systems. The plasmonic logic circuits were formed by patterning a silicon oxide film on a metal film, and the operation as a half adder was confirmed. The computed plasmonic signals can propagate through the plasmonic WDM networks and be connected to electronic integrated circuits at high data-transfer rates.

Paper Details

Date Published: 17 May 2017
PDF: 7 pages
Proc. SPIE 10242, Integrated Optics: Physics and Simulations III, 1024204 (17 May 2017); doi: 10.1117/12.2262910
Show Author Affiliations
M. Fukuda, Toyohashi Univ. of Technology (Japan)
M. Ota, Toyohashi Univ. of Technology (Japan)
A. Sumimura, Toyohashi Univ. of Technology (Japan)
S. Okahisa, Toyohashi Univ. of Technology (Japan)
M. Ito, Toyohashi Univ. of Technology (Japan)
Y. Ishii, Toyohashi Univ. of Technology (Japan)
T. Ishiyama, Toyohashi Univ. of Technology (Japan)


Published in SPIE Proceedings Vol. 10242:
Integrated Optics: Physics and Simulations III
Pavel Cheben; Jiří Čtyroký; Iñigo Molina-Fernández, Editor(s)

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