Share Email Print
cover

Proceedings Paper

Modeling and spectroscopy of carrier relaxation in semiconductor optoelectronics
Author(s): A. C. Scofield; A. I. Hudson; B. L. Liang; B. C. Juang; D. L. Huffaker; W. T. Lotshaw
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

The end performance of semiconductor optoelectronic devices is largely determined by the carrier dynamics of the constituent base materials. When combined with full-scale numerical models, optical spectroscopy is capable of providing detailed information about carrier generation and dynamics that is essential to accurate analysis of empirical test structure studies, and to translating those results into predictions for device performance. We have applied time-resolved and steady-state luminescence techniques to a variety of III-V materials and reference structures in order to investigate the mechanisms controlling carrier dynamics and to develop diagnostic tools to provide actionable feedback to R and D efforts for improvement and optimization of material/device performance.

Paper Details

Date Published: 8 May 2017
PDF: 7 pages
Proc. SPIE 10193, Ultrafast Bandgap Photonics II, 101930C (8 May 2017); doi: 10.1117/12.2262807
Show Author Affiliations
A. C. Scofield, The Aerospace Corp. (United States)
A. I. Hudson, The Aerospace Corp. (United States)
B. L. Liang, Univ. of California, Los Angeles (United States)
B. C. Juang, Univ. of California, Los Angeles (United States)
D. L. Huffaker, Univ. of California, Los Angeles (United States)
W. T. Lotshaw, The Aerospace Corp. (United States)


Published in SPIE Proceedings Vol. 10193:
Ultrafast Bandgap Photonics II
Michael K. Rafailov, Editor(s)

© SPIE. Terms of Use
Back to Top