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Proceedings Paper

Al/Sb free InGaAs unipolar barrier infrared detectors
Author(s): Fatih Uzgur; Utku Karaca; Ekin Kizilkan; Serdar Kocaman
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Paper Abstract

It is numerically shown that Al/Sb free InGaAs unipolar barrier detectors with superior performance compared to the conventional heterojunction detectors can be constructed. Compositionally graded layers provide the transition between the high bandgap InGaAs barrier and the lattice matched InGaAs absorber layers. In addition, the delta doped layers remove the valence band offset in order to block only majority carriers and allow unimpeded flow of minority carriers. More than one order of magnitude reduction in the dark current is observed while photocurrent remains nearly unchanged. Proposed barrier structure utilized in this study is not limited to short wave infrared (SWIR) and can be applied to a variety of materials operating in various infrared regions.

Paper Details

Date Published: 3 May 2017
PDF: 7 pages
Proc. SPIE 10177, Infrared Technology and Applications XLIII, 1017706 (3 May 2017); doi: 10.1117/12.2262519
Show Author Affiliations
Fatih Uzgur, Middle East Technical Univ. (Turkey)
Utku Karaca, Middle East Technical Univ. (Turkey)
Ekin Kizilkan, Middle East Technical Univ. (Turkey)
Serdar Kocaman, Middle East Technical Univ. (Turkey)


Published in SPIE Proceedings Vol. 10177:
Infrared Technology and Applications XLIII
Bjørn F. Andresen; Gabor F. Fulop; Charles M. Hanson; John Lester Miller; Paul R. Norton, Editor(s)

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