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Proceedings Paper

Energy harvesting based on piezoelectric AlN and AlScN thin films deposited by high rate sputtering
Author(s): Peter Frach; Stephan Barth; Hagen Bartzsch; Daniel Gloess
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Paper Abstract

Aluminum nitride (AlN) is a piezoelectric material often used as thin film in SAW/BAW devices. Furthermore, there is an increasing interest in its use for energy harvesting applications. Despite it has a relatively low piezoelectric coefficient, it is a suitable choice for energy harvesting applications and due to its low dielectric constant and good mechanical properties. In addition, it is a lead-free material. The films were deposited by reactive pulsed magnetron sputtering using the Double Ring Magnetron DRM 400. This sputter source together with suitable powering and process control allows depositing piezoelectric AlN very homogeneously on 8” substrates with deposition rates of up to 200 nm/min. With the developed technology, film thicknesses of several ten microns are technically and economically feasible. Moreover, by adjusting process parameters accordingly, it is possible to tune properties, like film stress, to application specific requirements. Additionally, it is known that the doping of AlN with Scandium results in a significantly increased piezoelectric coefficient. The influence of process parameters and Sc concentration on film properties were determined by piezometer, pulse echo, SEM, XRD, EDS and nanoindentation measurements. Energy harvesting measurements were done using an electromechanical shaker system for the excitation of defined vibrations and a laservibrometer for determination of the displacement of the samples. The generated power was measured as function of electric load at resonance. An rms power of up to 140μW using AlN films and of 350μW using AlScN films was generated on Si test pieces of 8x80mm2. Furthermore, energy harvesting measurements using manually bended steel strips of 75x25mm2 coated with AlScN were carried out as well. When using only a single actuation, energy of up to 8μJ could be measured. By letting the system vibrate freely, the damped vibration at resonance 50Hz resulted in a measured energy of 420μJ.

Paper Details

Date Published: 8 May 2017
PDF: 10 pages
Proc. SPIE 10194, Micro- and Nanotechnology Sensors, Systems, and Applications IX, 101942Z (8 May 2017); doi: 10.1117/12.2262460
Show Author Affiliations
Peter Frach, Fraunhofer-Institut für Organische Elektronik, Elektronenstrahl-und Plasmatechnik (Germany)
Stephan Barth, Fraunhofer-Institut für Organische Elektronik, Elektronenstrahl-und Plasmatechnik (Germany)
Hagen Bartzsch, Fraunhofer-Institut für Organische Elektronik, Elektronenstrahl-und Plasmatechnik (Germany)
Daniel Gloess, Fraunhofer-Institut für Organische Elektronik, Elektronenstrahl-und Plasmatechnik (Germany)


Published in SPIE Proceedings Vol. 10194:
Micro- and Nanotechnology Sensors, Systems, and Applications IX
Thomas George; Achyut K. Dutta; M. Saif Islam, Editor(s)

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