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Proceedings Paper

A low-power CMOS readout IC design for bolometer applications
Author(s): Arman Galioglu; Shahbaz Abbasi; Atia Shafique; Ömer Ceylan; Melik Yazici; Mehmet Kaynak; Emre C. Durmaz; Elif Gul Arsoy; Yasar Gurbuz
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Paper Abstract

A prototype of a readout IC (ROIC) designed for use in high temperature coefficient of resistance (TCR) SiGe microbolometers is presented. The prototype ROIC architecture implemented is based on a bridge with active and blind bolometer pixels with a capacitive transimpedance amplifier (CTIA) input stage and column parallel integration with serial readout. The ROIC is designed for use in high (≥ 4 %/K) TCR and high detector resistance Si/SiGe microbolometers with 17x17 μm2 pixel sizes in development. The prototype has been designed and fabricated in 0.25- μm SiGe:C BiCMOS process.

Paper Details

Date Published: 3 May 2017
PDF: 6 pages
Proc. SPIE 10177, Infrared Technology and Applications XLIII, 101771U (3 May 2017); doi: 10.1117/12.2262459
Show Author Affiliations
Arman Galioglu, Sabanci Univ. (Turkey)
Shahbaz Abbasi, Sabanci Univ. (Turkey)
Atia Shafique, Sabanci Univ. (Turkey)
Ömer Ceylan, Sabanci Univ. (Turkey)
Melik Yazici, Sabanci Univ. (Turkey)
Mehmet Kaynak, IHP GmbH (Germany)
Emre C. Durmaz, Sabanci Univ. (Turkey)
Elif Gul Arsoy, Sabanci Univ. (Turkey)
Yasar Gurbuz, Sabanci Univ. (Turkey)


Published in SPIE Proceedings Vol. 10177:
Infrared Technology and Applications XLIII
Bjørn F. Andresen; Gabor F. Fulop; Charles M. Hanson; John Lester Miller; Paul R. Norton, Editor(s)

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