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Proceedings Paper

Laser complex for investigation of semiconductor nonlinear constants
Author(s): Vitaly V. Grabovski; Ishtvan V. Fekeshgazi; Konstantin V. May; Valentin I. Prokhorenko; Dmytro Y. Yatskiv
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Paper Abstract

The laser complex for the investigations of nonlinear properties of semiconductors has been designed. The results of the two-photon absorption coefficient of the chalcohenide glass As2S3 measurements are presented. The measurements accuracy and threshold sensitivity of the complex are estimated.

Paper Details

Date Published: 3 November 1995
PDF: 5 pages
Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); doi: 10.1117/12.226237
Show Author Affiliations
Vitaly V. Grabovski, Institute of Semiconductor Physics (Ukraine)
Ishtvan V. Fekeshgazi, Institute of Semiconductor Physics (Ukraine)
Konstantin V. May, Institute of Semiconductor Physics (Ukraine)
Valentin I. Prokhorenko, Institute of Semiconductor Physics (Ukraine)
Dmytro Y. Yatskiv, Dynamic Ltd. (Ukraine)


Published in SPIE Proceedings Vol. 2648:
International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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