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Proceedings Paper

Determination of technological process-induced variations of silicon recombination parameters by infrared and microwave absorption
Author(s): E. Gaubas; A. Kaniava
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Paper Abstract

Contactless techniques of infrared and microwave absorption by free carriers for simultaneous determination of the set of recombination parameters by reconcilable experimental measurements and computer simulation are presented. Variations of recombination parameters induced by technological processes in silicon wafers are discussed.

Paper Details

Date Published: 3 November 1995
PDF: 7 pages
Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); doi: 10.1117/12.226231
Show Author Affiliations
E. Gaubas, Vilnius Univ. (Lithuania)
A. Kaniava, Vilnius Univ. (Lithuania)


Published in SPIE Proceedings Vol. 2648:
International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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