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Proceedings Paper

Plasma characteristics of single crystal silicon irradiated by millisecond pulsed laser
Author(s): Ming Guo; Guangyong Jin; Yong Tan
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Paper Abstract

In the air, Mach-zehnder interference system was set up to study the plasma expansion process of single crystal silicon induced by millisecond pulsed laser. Electron density is the main parameter of laser plasma characteristics. Calculation electron density of silicon plasma based on the relationship between the FWHM of Stark broadening of spectral line and the electron density. Experimental results show that: The existence material splash phenomenon is existence in silicon plasma generated by millisecond laser, the long pulse laser interaction with material has the thermal effect. Silicon plasma emission spectrum is strong in the distribution of the continuous spectrum, the discrete series of atoms and ions are superimposed on it. With the increase of the laser energy density, the electron density of the plasma increases.

Paper Details

Date Published: 5 January 2017
PDF: 5 pages
Proc. SPIE 10244, International Conference on Optoelectronics and Microelectronics Technology and Application, 102440N (5 January 2017); doi: 10.1117/12.2262253
Show Author Affiliations
Ming Guo, Changchun Univ. of Science and Technology (China)
Guangyong Jin, Changchun Univ. of Science and Technology (China)
Yong Tan, Changchun Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 10244:
International Conference on Optoelectronics and Microelectronics Technology and Application
Shaohua Yu; Jose Capmany; Yi Luo; Yikai Su; Songlin Zhuang; Yue Hao; Akihiko Yoshikawa; Chongjin Xie; Yoshiaki Nakano, Editor(s)

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