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Proceedings Paper

D-SCAN: an instrument for nondestructive monitoring of growth defects in GaAs wafers
Author(s): Kestutis Jarasiunas; Juozas V. Vaitkus; E. Gaubas; J. Kapturauskas; R. Vasiliauskas
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Paper Abstract

An instrument for nondestructive and contactless determination of growth-defect planar distribution across LEC grown GaAs wafers has been developed and assembled. It can be used for monitoring the defectiveness of the wafers as for evaluation of the effect of technological processes (as doping, annealing, irradiation, etc.) on homogeneity of wafer characteristics. The possibilities of the instrument and transient grating technique for metrology of semiconductor parameters are shown.

Paper Details

Date Published: 3 November 1995
PDF: 7 pages
Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); doi: 10.1117/12.226222
Show Author Affiliations
Kestutis Jarasiunas, Vilnius Univ. (Lithuania)
Juozas V. Vaitkus, Vilnius Univ. (Lithuania)
E. Gaubas, Vilnius Univ. (Lithuania)
J. Kapturauskas, Vilnius Univ. (Lithuania)
R. Vasiliauskas, Vilnius Univ. (Lithuania)


Published in SPIE Proceedings Vol. 2648:
International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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