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Proceedings Paper

Spectroscopic method for temperature measurements in active zone of AlxGa1-xAs DQW laser diodes
Author(s): A. J. Semjonov; B. Kolesov
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Paper Abstract

A new method for measurement of bulk temperature in the laser diode active zone using the spectral position of the peak gain is offered. The facet and bulk temperatures of a few diodes with output power from 1 to 10 W are measured. The obtained results allow us to conclude that the main reason for bulk temperature increasing is ohmic heating and that exists temperature gradient between facet and bulk temperatures along the active region length.

Paper Details

Date Published: 3 November 1995
PDF: 8 pages
Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); doi: 10.1117/12.226214
Show Author Affiliations
A. J. Semjonov, Max-Born-Institute (Germany)
B. Kolesov, Institute of Inorganic Chemistry (Russia)


Published in SPIE Proceedings Vol. 2648:
International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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