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Proceedings Paper

Diagnostics of Si-Ge alloys by spectroellipsometry
Author(s): Vladimir G. Litovchenko; Sergey I. Frolov; Nickolai I. Klyui; B. N. Shkarban; V. A. Mitus; D. Krueger
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Paper Abstract

In the framework of virtual crystal approximation using the empirical pseudopotential theory optical transitions of Si1-XGeX have been calculated. The effects of hydrostatic and uniaxial stress, and alloy stoichiometry on the optical gaps were investigated. Optical constant spectra for the Si1-XGeX alloys of different content have been measured by spectroscopic ellipsometer. Strain relaxation in annealed Si1-XGeX layers has been observed. From the comparison of measured direct optical transition energy E1 with the calculated one the value of lattice deformation in the pseudomorphic Si1-XGeX layer has been determined. Since the mechanical stress and material composition affect the distinctive behavior of different optical transitions it allows us to put forward a spectral measurement technique for determination of crystal lattice strain and alloy parameter X simultaneously.

Paper Details

Date Published: 3 November 1995
PDF: 6 pages
Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); doi: 10.1117/12.226206
Show Author Affiliations
Vladimir G. Litovchenko, Institute of Semiconductor Physics (Germany)
Sergey I. Frolov, Institute of Semiconductor Physics (Germany)
Nickolai I. Klyui, Institute of Semiconductor Physics (Germany)
B. N. Shkarban, Institute of Semiconductor Physics (Germany)
V. A. Mitus, Institute of Semiconductor Physics (Germany)
D. Krueger, Institute of Semiconductor Physics (Germany)


Published in SPIE Proceedings Vol. 2648:
International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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