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Proceedings Paper

Photoreflectance characterization on GaAs/AlGaAs optical waveguides of multiple quantum-well structure
Author(s): Gwo-Jen Jan; Yu-Yuan Tai; Kuo-Tung Hsu
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Paper Abstract

Two GaAs/AlGaAs passive semiconductor channel waveguides of the multiple quantum well structure have been made by molecular beam epitaxial growth technique. The specimens were studied by photoreflectance (PR) spectroscopy at room temperature. The micro-structures of the PR spectral energy features on the layers of the multiple quantum wells and band edge transition were observed. The optical transition energy features were fitted by the first derivative Gaussian function form (GFF) and the peak positions of the theoretical prediction for the micro-structures were calculated by using effective mass envelope function model. The energy features of the micro-structure in PR spectra were identified and interpreted. The results show that PR is a powerful tool to characterize the optical waveguides of multiple quantum well structure.

Paper Details

Date Published: 3 November 1995
PDF: 8 pages
Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); doi: 10.1117/12.226204
Show Author Affiliations
Gwo-Jen Jan, National Taiwan Univ. (Taiwan)
Yu-Yuan Tai, National Taiwan Univ. (Taiwan)
Kuo-Tung Hsu, Synchrotron Radiation Research Ctr. (Taiwan)


Published in SPIE Proceedings Vol. 2648:
International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics

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