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Proceedings Paper

Methods of testing light-emitting elements and devices for middle- and far-IR spectral regions based on negative luminescence phenomena
Author(s): Sergej S. Bolgov; Victor A. Botte; Lyudmila I. Konopaltseva; Victor I. Pipa; Anna P. Savchenko
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Paper Abstract

The complex method for determination of the important parameters of narrow-gap semiconductors and devices on their base at room and higher temperatures from the analysis of field and temperature dependences of the negative luminescence phenomenon has been developed. The study of the lifetime, surface recombination velocity and composition of narrow-gap epitaxial Hg1-xCdxTe films has been reported.

Paper Details

Date Published: 3 November 1995
PDF: 4 pages
Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); doi: 10.1117/12.226200
Show Author Affiliations
Sergej S. Bolgov, Institute of Semiconductor Physics (Ukraine)
Victor A. Botte, Institute of Semiconductor Physics (Ukraine)
Lyudmila I. Konopaltseva, Scientific-Research and Engineering-Introduction Ctr. of Priority Technologies on Optical (Ukraine)
Victor I. Pipa, Institute of Semiconductor Physics (Ukraine)
Anna P. Savchenko, Institute of Semiconductor Physics (Ukraine)


Published in SPIE Proceedings Vol. 2648:
International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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