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Proceedings Paper

Optical properties of submicron filament silicon crystals
Author(s): Y. G. Gule; Alla Ivanova Klimovskaya; Galina Yu. Rudko; Mikhail Ya. Valakh; I. P. Ostrovskii; G. G. Tsebulya
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Paper Abstract

The results of light scattering and photoluminescence investigations of sub micron free- standing silicon crystals are presented. Measurements were carried out within the wavelength range 0.2 - 1.5 micrometer. It was found that if the size of micro crystals is less than 1 micrometer, the peak of (L3 - L'3)-transition in the absorption spectrum shifts towards larger photon energies. We have found also that the micro crystals are the strongly depolarizing medium, and the depolarization depends on wavelength and angle of observation. Moreover, s- and p-polarized scattered light spectral dependences are different. The photoluminescence spectra of the crystals of micron and submicron scale are essentially different from the conventional bulk silicon spectra. At 4.2 K temperature we have observed new visible and several infra-red photoluminescence bands. While at room temperature only visible light band was found. The results obtained are treated using the Mie's theory and the suggestion of the surface atomic layers reconstruction.

Paper Details

Date Published: 3 November 1995
PDF: 15 pages
Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); doi: 10.1117/12.226199
Show Author Affiliations
Y. G. Gule, Institute of Semiconductor Physics (Ukraine)
Alla Ivanova Klimovskaya, Institute of Semiconductor Physics (Ukraine)
Galina Yu. Rudko, Institute of Semiconductor Physics (Ukraine)
Mikhail Ya. Valakh, Institute of Semiconductor Physics (Ukraine)
I. P. Ostrovskii, Institute of Semiconductor Physics (Ukraine)
G. G. Tsebulya, Institute of Material Science (Ukraine)

Published in SPIE Proceedings Vol. 2648:
International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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