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Proceedings Paper

Complex diagnostic of CdTe after under-threshold laser irradiation by photoluminescence, photoconductivity, and electrophysical methods
Author(s): Vladimir N. Babentsov; Aleksandr I. Vlasenko; Peter E. Mozol'; Elena P. Kopishinskaya
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Paper Abstract

In this paper a complex diagnostic of impurities defects interaction as a result of irradiation by a ruby laser pulse of 20 ns duration has been made. Photoluminescence, photoconductivity, Raman scattering, microscopic and electrophysical methods were used to characterize the deviation from the stoichiometric composition, impurities activation and disactivation, tellurium layer and dislocations network creation. The mechanism of dislocations appearance as shown is mechanical stresses accumulated in laser irradiated area under the threshold of plasticity of the material.

Paper Details

Date Published: 3 November 1995
PDF: 8 pages
Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); doi: 10.1117/12.226197
Show Author Affiliations
Vladimir N. Babentsov, Institute of Semiconductor Physics (Ukraine)
Aleksandr I. Vlasenko, Institute of Semiconductor Physics (Ukraine)
Peter E. Mozol', Institute of Semiconductor Physics (Ukraine)
Elena P. Kopishinskaya, Institute of Semiconductor Physics (Ukraine)


Published in SPIE Proceedings Vol. 2648:
International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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