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Proceedings Paper

Photoluminescence and x-ray studies of thin layers down to single quantum wells
Author(s): Alexey V. Svitelskiy; Galina N. Semenova; Vasily P. Klad'ko; Tatyana Georgiyevn Kryshtab
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Paper Abstract

We have demonstrated the capability and limitation of nondestructive photoluminescence and x-ray diffraction techniques in the characterization of GaAs, AlGaAs, InGaAs matched epitaxial layers grown by molecular beam epitaxy as well as quantum wells grown by metalorganic chemical vapor deposition. The application of the x ray diffraction and the photoluminescence methods to the same objects made it possible to control Al content in the AlxGa1-xAs layers in the range of x (0 less than or equal to x less than or equal to 1) and to solve some technological questions connected with layers lateral homogeneity.

Paper Details

Date Published: 3 November 1995
PDF: 8 pages
Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); doi: 10.1117/12.226189
Show Author Affiliations
Alexey V. Svitelskiy, Institute of Semiconductor Physics (Ukraine)
Galina N. Semenova, Institute of Semiconductor Physics (Ukraine)
Vasily P. Klad'ko, Institute of Semiconductor Physics (Ukraine)
Tatyana Georgiyevn Kryshtab, Institute of Semiconductor Physics (Ukraine)


Published in SPIE Proceedings Vol. 2648:
International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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