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Proceedings Paper

Characterization thin films TiO2 obtained in the magnetron sputtering process
Author(s): Maciej Kamiński; Piotr Firek; Piotr Caban
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Paper Abstract

The aim of the study was to elucidate influence parameters of magnetron sputtering process on growth rate and quality of titanium dioxide thin films. TiO2 films were produced on two inch silicon wafers by means of magnetron sputtering method. Characterization of samples was performed using ellipsometer and atomic force microscope (AFM). Currentvoltage (I-V) and capacitance-voltage (C-V) measurements were also carried out. The results enable to determine impact of pressure, power, gases flow and process duration on the physical parameters obtained layers such as electrical permittivity, flat band voltage and surface topography. Experiments were designed according to orthogonal array Taguchi method. Respective trends impact were plotted.

Paper Details

Date Published: 22 December 2016
PDF: 8 pages
Proc. SPIE 10175, Electron Technology Conference 2016, 1017516 (22 December 2016); doi: 10.1117/12.2261873
Show Author Affiliations
Maciej Kamiński, Warsaw Univ. of Technology (Poland)
Piotr Firek, Warsaw Univ. of Technology (Poland)
Piotr Caban, Institute of Electronic Materials Technology (Poland)


Published in SPIE Proceedings Vol. 10175:
Electron Technology Conference 2016
Barbara Swatowska; Wojciech Maziarz; Tadeusz Pisarkiewicz; Wojciech Kucewicz, Editor(s)

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