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Proceedings Paper

Structural morphology features and photoluminescence spectroscopy of IR-photosensitive HgCdTe/CdTe
Author(s): Lyudmila A. Karachevtseva; Alexei V. Lyubchenko; Nina Khilimova
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Paper Abstract

Mechanisms of macrodefect's and isovalent admixture's influence on photoluminescence spectra and halvanomagnetic parameters of HgCdTe/CdTe heterostructures were investigated. Profiles of electrical and structural parameter distributions through the depth of epilayers HgCdTe (x approximately equal to 0.2, p-type and with mixed conductivity), on CdTe substrates ('clean' and with 4% of Se or Zn components) were measured. There was detected substantial increase of well-known in CdTe donor-acceptor photoluminescence band 1.43 eV (T equals 77 K) in transition layers and CdTe substrates with increased macrodefect concentration (dislocations, subgrain boundaries, Te precipitates). It was established that such elevation was dealing with the donor component of conductivity in substrates and corresponding epilayers. The donor's nature was dealing with the substrate's defect structure. So photoluminescence band intensity may characterize CdTe defect level and permit us to reject such substrates.

Paper Details

Date Published: 3 November 1995
PDF: 4 pages
Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); doi: 10.1117/12.226186
Show Author Affiliations
Lyudmila A. Karachevtseva, Institute of Semiconductor Physics (Ukraine)
Alexei V. Lyubchenko, Institute of Semiconductor Physics (Ukraine)
Nina Khilimova, Institute of Semiconductor Physics (Ukraine)


Published in SPIE Proceedings Vol. 2648:
International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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