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Proceedings Paper

Photoluminescent and infrared Fourier diagnostics of porous silicon exposed to HF destructive etching
Author(s): Galina Yu. Rudko; Tamara Ya. Gorbach; Petr S. Smertenko; Sergey V. Svechnikov; Mikhail Ya. Valakh; Vladimir V. Bondarenko; Alexandr Dorofeev
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Paper Abstract

Photoluminescence (PL) and Fourier transform infrared spectroscopy (FTIR) have been used to characterize porous silicon layers (PSL) exposed to HF destructive etching. The results obtained lend support to the view that chemical passivation, in particular by oxygen, is the major factor which controls the origin of PL. The PL intensity and the PL shift are ascribed to the changes in hydrogen and oxygen termination of pores.

Paper Details

Date Published: 3 November 1995
PDF: 11 pages
Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); doi: 10.1117/12.226185
Show Author Affiliations
Galina Yu. Rudko, Institute of Semiconductor Physics (Ukraine)
Tamara Ya. Gorbach, Institute of Semiconductor Physics (Ukraine)
Petr S. Smertenko, Institute of Semiconductor Physics (Ukraine)
Sergey V. Svechnikov, Institute of Semiconductor Physics (Ukraine)
Mikhail Ya. Valakh, Institute of Semiconductor Physics (Ukraine)
Vladimir V. Bondarenko, Belarussian State Univ. of Informatics and Radioelectronics (Belarus)
Alexandr Dorofeev, Belarussian State Univ. of Informatics and Radioelectronics (Belarus)


Published in SPIE Proceedings Vol. 2648:
International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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