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Proceedings Paper

Pecularities of recombination processes in injection lasers based on (In,Ga)As quantum dots leading to the single longitudinal mode operation at room temperature
Author(s): Sergey V. Zaitsev; Nikita Yu. Gordeev; M. P. Soshnikov; Alexander V. Lunev; Alexey Y. Egorov; Alexey E. Zhukov; Victor M. Ustinov; Nikolai N. Ledentsov; Petr S. Kop'ev
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Paper Abstract

The characteristics of injection laser with recombination region based on (In,Ga)As quantum dots have been studied. The quality of the structures does not prevent the specific features of quantum dot active region to manifest itself in laser characteristics. The single-mode lasing has been reproducibly achieved in broad area laser diodes. The threshold current densities have been found to be higher than the theoretical values due to non-radiative recombination. The results obtained are promising for applications where a very narrow lasing spectrum is important, i.e., laser arrays, pumping of solid-state lasers, etc.

Paper Details

Date Published: 3 November 1995
PDF: 7 pages
Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); doi: 10.1117/12.226182
Show Author Affiliations
Sergey V. Zaitsev, A.F. Ioffe Physical-Technical Institute (Russia)
Nikita Yu. Gordeev, A.F. Ioffe Physical-Technical Institute (Russia)
M. P. Soshnikov, A.F. Ioffe Physical-Technical Institute (Russia)
Alexander V. Lunev, A.F. Ioffe Physical-Technical Institute (Russia)
Alexey Y. Egorov, A.F. Ioffe Physical-Technical Institute (Russia)
Alexey E. Zhukov, A.F. Ioffe Physical-Technical Institute (Russia)
Victor M. Ustinov, A.F. Ioffe Physical-Technical Institute (Russia)
Nikolai N. Ledentsov, A.F. Ioffe Physical-Technical Institute (Russia)
Petr S. Kop'ev, A.F. Ioffe Physical-Technical Institute (Russia)


Published in SPIE Proceedings Vol. 2648:
International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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