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Proceedings Paper

Impact of nanocrystal(s) location on C-V-t and I-V-t characteristics of ncMOS structures
Author(s): D. Tanous; A. Mazurak; B. Majkusiak
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Paper Abstract

We present the study of impact of the nanocrystal position and oxide layers thicknesses of the metal-insulatorsemiconductor structure with nanocrystals embedded in the insulator layer on the time-dependent current-voltage and capacitance-voltage characteristics. The theoretical considerations are based on the developed numerical model of a double-barrier MOS structure. The dominant current path in the structure is analysed in respect to the nanocrystals charging/discharging processes.

Paper Details

Date Published: 22 December 2016
PDF: 8 pages
Proc. SPIE 10175, Electron Technology Conference 2016, 101750H (22 December 2016); doi: 10.1117/12.2261816
Show Author Affiliations
D. Tanous, Warsaw Univ. of Technology (Poland)
A. Mazurak, Warsaw Univ. of Technology (Poland)
B. Majkusiak, Warsaw Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 10175:
Electron Technology Conference 2016
Barbara Swatowska; Wojciech Maziarz; Tadeusz Pisarkiewicz; Wojciech Kucewicz, Editor(s)

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