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Proceedings Paper

Photoluminescence diagnostic of semi-insulating materials for ion-implanted and quantum-size structures on gallium-arsenide-based micro-, opto-, and quantum electronics devices
Author(s): Fedir V. Motsnyi; Mikhail P. Lisitsa
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Paper Abstract

On the basis of experimental investigations of authors the expediency of using photoluminescence (PL) method in gallium arsenide semiconductor device technology is shown.

Paper Details

Date Published: 3 November 1995
PDF: 4 pages
Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); doi: 10.1117/12.226180
Show Author Affiliations
Fedir V. Motsnyi, Institute of Semiconductor Physics (Ukraine)
Mikhail P. Lisitsa, Institute of Semiconductor Physics (Ukraine)


Published in SPIE Proceedings Vol. 2648:
International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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