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Proceedings Paper

Diagnostics of glassy semiconductors by nonlinear absorptive methods
Author(s): Ishtvan V. Fekeshgazi; Konstantin V. May; Vladymyr M. Mitsa; V. V. Roman
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Paper Abstract

The dependencies of linear losses coefficient (alpha) , two-photon absorption constant (beta) , optical damage threshold Ip and pseudogap width E0 on structure and concentration changes of glasses from the glass-forming region of Ge-As-S system along the As-GeS2, As-Ge2S3, As2S3-GeS2 and As2S3-Ge2S3 sections have been experimentally studied. The critical values of concentration and average coordination number at which the (alpha) , (beta) , and Ip reach their extremes were determined. These results have been discussed in terms of phase and structure-topological transitions.

Paper Details

Date Published: 3 November 1995
PDF: 5 pages
Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); doi: 10.1117/12.226177
Show Author Affiliations
Ishtvan V. Fekeshgazi, Institute of Semiconductor Physics (Ukraine)
Konstantin V. May, Institute of Semiconductor Physics (Ukraine)
Vladymyr M. Mitsa, Institute of Semiconductor Physics (Ukraine)
V. V. Roman, Institute of Semiconductor Physics (Ukraine)


Published in SPIE Proceedings Vol. 2648:
International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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