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Proceedings Paper

Modeling of tunnel field effect transistor: the impact of construction parameters
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Paper Abstract

The aim of the work is to present a theoretical model of tunnel field effect transistor and to investigate the influence of the TFET’s construction parameters on the current-voltage characteristics. The solution to the problem of electrostatics in the structure is based on the numerical solution of two-dimensional Poisson equation and the electron and hole continuity equations. The tunneling process has been taken into account by a non-local interband generation model. Output and transfer characteristics of the double gate TFET were generated.

Paper Details

Date Published: 22 December 2016
PDF: 9 pages
Proc. SPIE 10175, Electron Technology Conference 2016, 101750J (22 December 2016); doi: 10.1117/12.2261752
Show Author Affiliations
Piotr Wiśniewski, Warsaw Univ. of Technology (Poland)
Bogdan Majkusiak, Warsaw Univ. of Technology (Poland)

Published in SPIE Proceedings Vol. 10175:
Electron Technology Conference 2016
Barbara Swatowska; Wojciech Maziarz; Tadeusz Pisarkiewicz; Wojciech Kucewicz, Editor(s)

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