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Proceedings Paper

Nonlinear and interferometric optical methods of diagnostics of semiconductors
Author(s): Volodymyr S. Ovechko; Andrii M. Dmitruk
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Paper Abstract

The feasibility of the optical scheme of measurement of concentration of nonequilibrium charge carriers has been demonstrated. Relaxation of electrons and heating of sample have been taken into account dealing with theoretical description. Experimental research has been carried out with c-Si sample.

Paper Details

Date Published: 3 November 1995
PDF: 6 pages
Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); doi: 10.1117/12.226173
Show Author Affiliations
Volodymyr S. Ovechko, Kiev Univ. (Ukraine)
Andrii M. Dmitruk, Kiev Univ. (Ukraine)


Published in SPIE Proceedings Vol. 2648:
International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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