Share Email Print
cover

Proceedings Paper

Optical nonlinearities in GaAs at EL2 quenching by short laser pulses
Author(s): Markas Sudzius; L. Bastiene; Kestutis Jarasiunas
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

The possibility to combine photorefractive effect and metastability of defect states in GaAs crystals is combined. Peculiarities of free carrier and photorefractive nonlinearities at conditions of deep donor EL2 optical quenching by short laser pulse are analyzed theoretically and experimentally. The enhancement of low temperature photorefractive effect was observed at T less than or equal to 250 K in a good agreement with theoretical simulation and attributed to the temporary EL2 quenching by nanosecond pulses.

Paper Details

Date Published: 3 November 1995
PDF: 7 pages
Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); doi: 10.1117/12.226172
Show Author Affiliations
Markas Sudzius, Vilnius Univ. (Lithuania)
L. Bastiene, Vilnius Univ. (Lithuania)
Kestutis Jarasiunas, Vilnius Univ. (Lithuania)


Published in SPIE Proceedings Vol. 2648:
International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

© SPIE. Terms of Use
Back to Top