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Proceedings Paper

Nondestructive characterization of porous silicon structures by transient grating technique
Author(s): Kestutis Jarasiunas; Markas Sudzius; Liudvikas Subacius; I. Simkiene; Vygantas Mizeikis
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Paper Abstract

We demonstrate for the first time the applicability of transient grating technique to study carrier dynamics in porous silicon and to characterize the sublayers with the different structure in an optical way. The parameters of deeper layers of 130 mm thick porous Si structure have been found similar to those in crystalline substrate. The free standing films at high injection levels indicated very fast nonequilibrium carrier recombination with t equals 430 ps, while the carrier lifetime in its crystalline substrate was above 2 ns.

Paper Details

Date Published: 3 November 1995
PDF: 6 pages
Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); doi: 10.1117/12.226171
Show Author Affiliations
Kestutis Jarasiunas, Vilnius Univ. (Lithuania)
Markas Sudzius, Vilnius Univ. (Lithuania)
Liudvikas Subacius, Institute of Semiconductor Physics (Lithuania)
I. Simkiene, Institute of Semiconductor Physics (Lithuania)
Vygantas Mizeikis, Vilnius Univ. (Lithuania)


Published in SPIE Proceedings Vol. 2648:
International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics

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