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Proceedings Paper

Enhancement of light diffraction efficiency in semiconductors by microwave electric field: experiment and calculations
Author(s): Liudvikas Subacius; Viktoras Gruzinskis; Eugenijus Starikov; P. Shiktorov; Kestutis Jarasiunas
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Paper Abstract

In this paper, we present numerical simulation results of spatially modulated carrier transport and of non-linear optical phenomena for the case of non-uniform electron gas heating as well as the experimental data on light self-diffraction efficiency in external microwave fields. The expected field induced variations of refractive index modulation seen in light self-diffraction on transient gratings are determined mainly by electro-optical non-linearity due to enhanced internal field.

Paper Details

Date Published: 3 November 1995
PDF: 8 pages
Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); doi: 10.1117/12.226168
Show Author Affiliations
Liudvikas Subacius, Institute of Semiconductor Physics (Lithuania)
Viktoras Gruzinskis, Institute of Semiconductor Physics (Lithuania)
Eugenijus Starikov, Institute of Semiconductor Physics (Lithuania)
P. Shiktorov, Institute of Semiconductor Physics (Lithuania)
Kestutis Jarasiunas, Vilnius Univ. (Lithuania)


Published in SPIE Proceedings Vol. 2648:
International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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