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Proceedings Paper

Far-infrared spectroscopy of polar semiconductor superlattices (GaAs-GaPxAs1-x)
Author(s): Nikolas L. Dmitruk; Anatoliy V. Goncharenko; Oleg S. Gorea; Volodymyr R. Romaniuk; Olga M. Tatarinscaia; Evgenie F. Venger
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Paper Abstract

The features of the infrared reflection spectroscopy are considered for long-period semiconductor superlattices. Taking the GaAs/GaPxAs1-x superlattice system as an example, the applicability of the bulk model is related to light penetration/localization depths. We propose to use relative measurements (i.e. to study RpRs spectra) for raising the accuracy of determination of superlattice parameters by solving the inverse problem.

Paper Details

Date Published: 3 November 1995
PDF: 6 pages
Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); doi: 10.1117/12.226155
Show Author Affiliations
Nikolas L. Dmitruk, Institute of Semiconductor Physics (Ukraine)
Anatoliy V. Goncharenko, Institute of Semiconductor Physics (Ukraine)
Oleg S. Gorea, State Univ. of Moldova (Moldova)
Volodymyr R. Romaniuk, Institute of Semiconductor Physics (Ukraine)
Olga M. Tatarinscaia, State Univ. of Moldova (Moldova)
Evgenie F. Venger, Institute of Semiconductor Physics (Ukraine)


Published in SPIE Proceedings Vol. 2648:
International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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