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Proceedings Paper

Ambipolar diffusion length measurements in a-Si:H by constant photocurrent method (CPM)
Author(s): Valerie A. Ligachov
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Paper Abstract

Diffusion length (L) is one of the major parameters of semiconductor materials and can serve as an objective criterion of their quality. It stipulated the necessity of improvement of existing and development of new experimental methods of determination of the diffusion length. Especially in actuality when such a task is presented for disordered semiconductor materials, which are formed in nonequilibrium conditions, and, strictly speaking, electrophysical characteristics of each prepared sample are unique.

Paper Details

Date Published: 3 November 1995
PDF: 7 pages
Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); doi: 10.1117/12.226147
Show Author Affiliations
Valerie A. Ligachov, Moscow Power Engineering Institute (Russia)


Published in SPIE Proceedings Vol. 2648:
International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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