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Proceedings Paper

Characterization of down-state capacitance degradation in capacitive RF MEMS switch with rough dielectric layer
Author(s): Yang Gao; Jun-ru Li; Le Jia; Qiang Lei
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Paper Abstract

In order to obtain the high-fidelity model of latching failure threshold power of the capacitive RF MEMS switch, it is necessary to find out the rough dielectric layer effect on its down-state capacitance degradation. The comparative modeling method between the 3-D electromagnetic simulation and the equivalent circuit simulation is proposed. First, the simulation curve of the switch isolation (S21) is attained at different roughness levels with the HFSS 3-D electromagnetic model. And then the simulation curve of the S21 of the ADS equivalent circuit model is consistent with the simulation result of the 3-D electromagnetic as far as possible by tuning the down-state capacitance in the equivalent circuit. Hence, the relationship between the dielectric layer roughness and the down-state capacitance is identified. By changing the roughness level of dielectric layer and repeating the above steps, the relationship between the dielectric layer roughness and the down-state capacitance degradation is identified. Rationality and feasibility of the method is verified by comparing the calculated values of the down-state capacitance with the measured values in a relevant literature. And analytical equation of the latching failure threshold power of the capacitive RF MEMS switch with perfect smooth dielectric layer is modified, according to the relationship between the dielectric layer roughness and the down-state capacitance degradation, which is also suitable for predicting the power handling capacity of the switch with rough dielectric layer.

Paper Details

Date Published: 5 January 2017
PDF: 8 pages
Proc. SPIE 10244, International Conference on Optoelectronics and Microelectronics Technology and Application, 102441W (5 January 2017); doi: 10.1117/12.2261426
Show Author Affiliations
Yang Gao, China Academy of Engineering Physics (China)
Jun-ru Li, Southwest Univ. of Science and Technology (China)
Le Jia, Southwest Univ. of Science and Technology (China)
Chongqing Univ. (China)
Qiang Lei, Southwest Univ. of Science and Technology (China)
Institute of High Energy Physics (China)


Published in SPIE Proceedings Vol. 10244:
International Conference on Optoelectronics and Microelectronics Technology and Application
Shaohua Yu; Jose Capmany; Yi Luo; Yikai Su; Songlin Zhuang; Yue Hao; Akihiko Yoshikawa; Chongjin Xie; Yoshiaki Nakano, Editor(s)

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