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Proceedings Paper

Schottky photodetector with tapered thin metal strip on silicon waveguide
Author(s): Jingshu Guo; Zhiwei Wu; Yuan Li; Yanli Zhao
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Paper Abstract

We propose a Schottky photodetector with tapered thin metal strip on SOI platform. Schottky photodetector can detect photons below the semiconductor bandgap energy by exploiting the internal photoemission. In the internal photoemission process, the hot carriers generate in the tapered thin metal strip where light absorption occurs, and part of these carriers can be emitted over the Schottky barrier and collected as photocurrent. The small thickness of the tapered metal strip contributes to a high internal quantum efficiency of 11.25%. This metal-semiconductor structure acts as a photonics-plasmonics mode convertor. According to 3D-FDTD simulation, about 95.8% of the incident optical power can be absorbed in the absorption area within 4.5μm at wavelength of 1550 nm. The responsivity is estimated to be 0.135A/W at 1550 nm. This compact design with a low dark current has a minimum detectable power of -23.15 dβm. We argue that this design can promote the progress of all-Si photo-detection in near-infrared communication band.

Paper Details

Date Published: 5 January 2017
PDF: 5 pages
Proc. SPIE 10244, International Conference on Optoelectronics and Microelectronics Technology and Application, 1024420 (5 January 2017); doi: 10.1117/12.2261325
Show Author Affiliations
Jingshu Guo, Huazhong Univ. of Science and Technology (China)
Zhiwei Wu, Huazhong Univ. of Science and Technology (China)
Yuan Li, Huazhong Univ. of Science and Technology (China)
Yanli Zhao, Huazhong Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 10244:
International Conference on Optoelectronics and Microelectronics Technology and Application
Shaohua Yu; Jose Capmany; Yi Luo; Yikai Su; Songlin Zhuang; Yue Hao; Akihiko Yoshikawa; Chongjin Xie; Yoshiaki Nakano, Editor(s)

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