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Proceedings Paper

Theory of optical nondestructive testing of the surface quality of semiconductor wafers on kinetics of recombination heating
Author(s): N. N. Grigor'ev; Tamara A. Kudykina
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Paper Abstract

The problem of heating of semiconductor surface and its subsurface layers in the case of pulse laser irradiation is theoretically considered. It is supposed that heating is due to surface recombination of nonequilibrium carriers. The time dependencies of temperature for different values of a surface recombination are given. The obtained heating dependencies can be used for analysis of a surface quality.

Paper Details

Date Published: 3 November 1995
PDF: 10 pages
Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); doi: 10.1117/12.226129
Show Author Affiliations
N. N. Grigor'ev, Institute of Semiconductors (Ukraine)
Tamara A. Kudykina, Institute of Semiconductors (Ukraine)


Published in SPIE Proceedings Vol. 2648:
International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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