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Proceedings Paper

Advanced slow-light modulators (Conference Presentation)
Author(s): Toshihiko Baba
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Paper Abstract

Slow light in photonic crystal waveguides allows the phase shifters in Si MZ modulators to enhance the modulator efficiency. In this study, the group index and bandwidth product is maximized, the mode penetration into photonic crystal claddings and electrical series resistance are balanced, and the p-n junction profile is optimized. The device is fabricated on 200 mm wafer using KrF exposure, and practical performance (bitrates up to 32 Gbps, 3 dB extinction ratio, 1.75 V PPG voltage, <0.2 pJ/bit energy consumption, 20 nm bandwidth, 5 dB passive loss, 1 dB modulation loss) is obtained in a 200-micron device. WDM, QPSK, PAM and sub-bandgap PD operations are also demonstrated.

Paper Details

Date Published: 28 April 2017
PDF: 1 pages
Proc. SPIE 10119, Slow Light, Fast Light, and Opto-Atomic Precision Metrology X, 101191M (28 April 2017); doi: 10.1117/12.2261140
Show Author Affiliations
Toshihiko Baba, Yokohama National Univ. (Japan)

Published in SPIE Proceedings Vol. 10119:
Slow Light, Fast Light, and Opto-Atomic Precision Metrology X
Selim M. Shahriar; Jacob Scheuer, Editor(s)

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