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Proceedings Paper

Vertical solar blind Schottky photodiode based on homoepitaxial Ga2O3 thin film
Author(s): Fikadu Alema; Brian Hertog; Andrei V. Osinsky; Partha Mukhopadhyay; Mykyta Toporkov; Winston V. Schoenfeld; Elaheh Ahmadi; James Speck
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Paper Abstract

High quality germanium doped β-Ga2O3 epitaxial film was grown by PMBE technique and fabricated into a vertical type Schottky photodiode with a Pt/nGa2O3/n+Ga2O3(010) structure. The photodiode exhibited excellent rectifying characteristics with a turn on voltage ~ 1V and near zero bias leakage current ~ 100 fA. The photoresponse measurement showed a true solar blind sensitivity with cutoff wavelength ~260 nm and an out of band rejection ratio of ~104. A maximum responsivity of 0.09 A/W at 230 nm was measured at zero bias, corresponding to an external quantum efficiency of ~52 %. The time response of the photovoltaic diode is in the millisecond range and has no long-time decay component which is very common in the MSM photoconductive wide bandgap devices. The photodiode performance remains stable up to 300°C, suggesting its potential use for high temperature applications.

Paper Details

Date Published: 24 February 2017
PDF: 8 pages
Proc. SPIE 10105, Oxide-based Materials and Devices VIII, 101051M (24 February 2017); doi: 10.1117/12.2260824
Show Author Affiliations
Fikadu Alema, Agnitron Technology, Inc. (United States)
Brian Hertog, Agnitron Technology, Inc. (United States)
Andrei V. Osinsky, Agnitron Technology, Inc. (United States)
Partha Mukhopadhyay, CREOL, The College of Optics and Photonics, Univ. of Central Florida (United States)
Mykyta Toporkov, CREOL, The College of Optics and Photonics, Univ. of Central Florida (United States)
Winston V. Schoenfeld, CREOL, The College of Optics and Photonics, Univ. of Central Florida (United States)
Elaheh Ahmadi, Univ. of California, Santa Barbara (United States)
James Speck, Univ. of California, Santa Barbara (United States)


Published in SPIE Proceedings Vol. 10105:
Oxide-based Materials and Devices VIII
Ferechteh H. Teherani; David C. Look; David J. Rogers, Editor(s)

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