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Proceedings Paper

Line end shortening and iso-dense etch bias improvement by ALD spacer shrink process
Author(s): Rui Chen; Granger Lobb; Aleksandra Clancy; Bradley Morgenfeld; Shyam Pal
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Paper Abstract

Abstract Multiple patterning employing etch shrink extends the scaling of hardmask open CD (HCD) to sub-50nm regime. A plasma-assisted shrink technique is primarily used in the back-end-of-line (BEOL) however it faces major challenges such as the line end shortening (LES) and large critical dimension iso-dense bias (IDB). In order to mitigate these two problems we apply an atomic layer deposition (ALD) spacer shrink process at 10nm metal interconnect layer with sub-20nm minimum half-pitch. As a result we observed 8nm LES improvement in tip-to-tip (T2T) two-dimensional (2D) structures, and 5nm IDB reduction in one-dimensional (1D) structures. These improvements suggest that the ALD spacer shrink can contribute to more precise CD control in multiple patterning.

Paper Details

Date Published: 27 March 2017
PDF: 7 pages
Proc. SPIE 10146, Advances in Patterning Materials and Processes XXXIV, 101461D (27 March 2017); doi: 10.1117/12.2260450
Show Author Affiliations
Rui Chen, GLOBALFOUNDRIES Inc. (United States)
Granger Lobb, GLOBALFOUNDRIES Inc. (United States)
Aleksandra Clancy, GLOBALFOUNDRIES Inc. (United States)
Bradley Morgenfeld, GLOBALFOUNDRIES Inc. (United States)
Shyam Pal, GLOBALFOUNDRIES Inc. (United States)


Published in SPIE Proceedings Vol. 10146:
Advances in Patterning Materials and Processes XXXIV
Christoph K. Hohle, Editor(s)

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