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Proceedings Paper

A numeric model for the imaging mechanism of metal oxide EUV resists
Author(s): W. D. Hinsberg; S. Meyers
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Paper Abstract

A numeric model is proposed describing the chemical and physical mechanisms governing image formation in metaloxide (MOx) EUV photoresist systems. Experimental measurements of physical and chemical properties are used to develop a quantitative representation of the chemical and physical state of the MOx resist film at each step in the lithographic process. The role of radiation-induced condensation to drive non-linear changes in development rate is elucidated. Lithographic performance parameters are predicted and compared with experimental results.

Paper Details

Date Published: 27 March 2017
PDF: 11 pages
Proc. SPIE 10146, Advances in Patterning Materials and Processes XXXIV, 1014604 (27 March 2017); doi: 10.1117/12.2260265
Show Author Affiliations
W. D. Hinsberg, Columbia Hill Technical Consulting (United States)
S. Meyers, Inpria Corp. (United States)


Published in SPIE Proceedings Vol. 10146:
Advances in Patterning Materials and Processes XXXIV
Christoph K. Hohle, Editor(s)

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