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Proceedings Paper

Modeling EUVL patterning variability for metal layers in 5nm technology node and its effect on electrical resistance
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Paper Abstract

In 5nm node, even minor process variation in extreme ultraviolet lithography (EUVL) can bring significant impact to the device performance. Except for the overlay and critical dimension uniformity (CDU), EUV specific effects, such as shadowing, three-dimensional mask effect (M3D), and stochastic effects, must also be understood in processing, modeling, and optical proximity correction (OPC). We simulate those variabilities using a calibrated model and compare it to what is observed on the wafer. The interconnect path of Metal1-Via1-Metal2 is studied by using a silicon-calibrated resistivity model to analyze the related overlap area and the electrical resistance. The approach allows us to quantify the impact of EUVL process by investigating the individual contribution of each patterning process variations.

Paper Details

Date Published: 24 March 2017
PDF: 12 pages
Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 101430I (24 March 2017); doi: 10.1117/12.2259964
Show Author Affiliations
Weimin Gao, Synopsys, Inc. (Belgium)
IMEC (Belgium)
Victor Blanco, IMEC (Belgium)
Vicky Philipsen, IMEC (Belgium)
Itaru Kamohara, Synopsys GmbH (Germany)
Yves Saad, Synopsys LLC (Switzerland)
Ivan Ciofi, IMEC (Belgium)
Lawrence S. Melvin, Synopsys, Inc. (United States)
Eric Hendrickx, IMEC (Belgium)
Vincent Wiaux, IMEC (Belgium)
Ryoung Han Kim, IMEC (Belgium)


Published in SPIE Proceedings Vol. 10143:
Extreme Ultraviolet (EUV) Lithography VIII
Eric M. Panning, Editor(s)

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