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Proceedings Paper

Contrast curves for low energy electron exposures of an EUV resist in a scanning electron microscope
Author(s): Suchit Bhattarai; Andrew R. Neureuther; Patrick P. Naulleau
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Paper Abstract

We present an experimental technique for determining the energy delivery efficiency of secondary electrons in an EUV resist, by directly exposing a positive tone chemically amplified resist with 29- 91 eV electrons created by utilizing the deceleration technology in a scanning electron microscope. Charging is an important problem associated with thin film exposure experiments. We assess the feasibility of using the SEM frame rate as a knob for controlling charging related artifacts. Preliminary measurements of secondary electron emission signal from an unexposed region in the resist provide clues about the time domain surface potentials that may form while the sample charges during exposures. These signals are found to change as a function of the SEM frame rate and landing energies. We provide contrast curve data for resist exposures with 29 eV, 49 eV and 91 eV electrons at three frame rates of 33 ms/frame, 8 s/frame and 30 s/frame. The energy delivery efficiency of electrons estimated for all three frame rates are also provided.

Paper Details

Date Published: 27 March 2017
PDF: 9 pages
Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 101432C (27 March 2017); doi: 10.1117/12.2259795
Show Author Affiliations
Suchit Bhattarai, Univ. of California, Berkeley (United States)
Andrew R. Neureuther, Univ. of California, Berkeley (United States)
Patrick P. Naulleau, Lawrence Berkeley National Lab. (United States)


Published in SPIE Proceedings Vol. 10143:
Extreme Ultraviolet (EUV) Lithography VIII
Eric M. Panning, Editor(s)

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